Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure

Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure

In the present paper, we show tungsten diselenide (WSe2) devices that can be tuned to operate as n-type and p-type field-effect transistors (FETs) as well as band-to-band tunnel transistors on the same flake. Source, channel, and drain areas of the WSe2 flake are adjusted, using buried triple-gate substrates with three independently controllable gates. The device characteristics found in the tu...

Polarity control in WSe2 double-gate transistors

As scaling of conventional silicon-based electronics is reaching its ultimate limit, considerable effort has been devoted to find new materials and new device concepts that could ultimately outperform standard silicon transistors. In this perspective two-dimensional transition metal dichalcogenides, such as MoS2 and WSe2, have recently attracted considerable interest thanks to their electrical ...

Floating-gate Mos Synapse Transistors

Modelling of Hfe avalanche degradation in gate controlled bipolar transistors

2014 The avalanche degradation phenomenon model presented here takes into account both : an increase of surface recombination rate localized near the initial intrinsic point in the junction transition region surface and a displacement of the intrinsic point due to the oxide injected charge. A method for the determination of parameters of the model is presented. The modelling results are given f...

Digital Controlled Oscillator Design with Novel 3 Transistors XOR Gate

The Digital controlled oscillator (DCO) is the core element of all digital phase locked loop (ADPLL) system. Here, we propose DCO structures with digital control, reduced hardware and low power consumption. Different DCOs are based on ring based topology having 3, 4 & 5 control bits. Number of control bits can be increased as per the requirement of output frequency range. DCOs using XOR as an i...